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Atomristors: Single-Atom Memristors and Low-Energy Electronic Systems

This presentation focuses on the discovery of memory effect
phenomena in 2D atomically-thin nanomaterials towards
greater scientific understanding and advanced engineering
applications. Non-volatile memory devices based on 2D
materials are an application of the physics of defects and is a
rapidly advancing field with rich physics that can be
attributed to vacancies combined with metal adsorption. In
particular the talk will highlight our pioneering work on
monolayer memory (atomristors) that has expanded to over a
dozen 2D sheets and can enable various applications
including zero-power devices, non-volatile RF switches, and
memristors for neuromorphic computing. These memory
devices offer high-energy efficiency and fast switching that
may benefit mobile systems, cloud computing and data centers towards reduced energy consumption
worldwide.
References:
[1] M. Kim, G. Ducournau, S. Skrzypczak, S. J. Yang, P. Szriftgiser, N. Wainstein, K. Stern, H. Happy, E.
Yalon, E. Pallecchi, and D. Akinwande, "Monolayer molybdenum disulfide switches for 6G communication
systems," Nature Electronics, 2022.
[2] R. Ge, X. Wu, L. Liang, …, J. C. Lee, and D. Akinwande, "A Library of Atomically Thin 2D Materials
Featuring the Conductive-Point Resistive Switching Phenomenon," Advanced Materials, vol. 33, 2021.
[3] S. M. Hus, R. Ge, P.-A. Chen, L. Liang, G. E. Donnelly, W. Ko, F. Huang, M.-H. Chiang, A.-P. Li, and D.
Akinwande, "Observation of single-defect memristor in an MoS2 atomic sheet," Nature Nanotechnology,
11/2020.
[4] S. Chen, M. R. Mahmoodi, … D. Akinwande, D. B. Strukov, and M. Lanza, "Wafer-scale integration of
two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks," Nature
Electronics, 10/2020.
[5] D. Akinwande, C. Huyghebaert, C.-H. Wang, Serna, S. Goossens, L. Li, H. S. P. Wong, and F. Koppens,
"Graphene and 2D Materials for Silicon Technology," Nature, 2019.
 

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